Memory transistor with multiple charge storing layers and a high work function gate electrode

ABSTRACT

Semiconductor devices including non-volatile memory transistors and methods of fabricating the same to improve performance thereof are provided. In one embodiment, the memory transistor comprises an oxide-nitride-oxide (ONO) stack on a surface of a semiconductor substrate, and a high work function gate electrode formed over a surface of the ONO stack. Preferably, the gate electrode comprises a doped polysilicon layer, and the ONO stack comprises multi-layer charge storing layer including at least a substantially trap free bottom oxynitride layer and a charge trapping top oxynitride layer. More preferably, the device also includes a metal oxide semiconductor (MOS) logic transistor formed on the same substrate, the logic transistor including a gate oxide and a high work function gate electrode. In certain embodiments, the dopant is a P+ dopant and the memory transistor comprises N-type (NMOS) silicon-oxide-nitride-oxide-silicon (SONOS) transistor while the logic transistor a P-type (PMOS) transistor. Other embodiments are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims the benefit ofpriority under 35 U.S.C. 119(e) to U.S. Non-Provisional application Ser.No. 15/335,180, which is a continuation of U.S. patent application Ser.No. 14/811,346, filed Jul. 28, 2015, now U.S. Pat. No. 9,502,543, issuedon Nov. 22, 2016, which is a continuation of U.S. patent applicationSer. No. 14/159,315, filed on Jan. 20, 2014, now U.S. Pat. No.9,093,318, issued on Jul. 28, 2015 which is a continuation of U.S.patent application Ser. No. 13/539,466, filed on Jul. 1, 2012, now U.S.Pat. No. 8,633,537, issued on Jan. 21, 2014, which is acontinuation-in-part of patent application Ser. No. 13/288,919, filedNov. 3, 2011, now U.S. Pat. No. 8,859,374, issued on Oct. 14, 2014,which is a divisional of U.S. patent Ser. No. 12/152,518, filed May 13,2008, now U.S. Pat. No. 8,063,434, issued Nov. 22, 2011, which claimsthe benefit of priority to U.S. Provisional Patent Application No.60/940,160, filed May 25, 2007, all of which application are herebyincorporated by reference in their entirety.

TECHNICAL FIELD

The present invention relates generally to semiconductor devices, andmore particularly to integrated circuits including non-volatilesemiconductor memories and methods of fabricating the same.

BACKGROUND OF THE INVENTION

Non-volatile semiconductor memories are devices that can be electricallyerased and reprogrammed. One type of non-volatile memory that is widelyused for general storage and transfer of data in and between computersand other electronic devices is flash memory, such as a split gate flashmemory. A split gate flash memory transistor has an architecture similarto that of a conventional logic transistor, such asMetal-Oxide-Semiconductor Field Effect Transistor (MOSFET), in that italso includes a control gate formed over a channel connecting a sourceand drain in a substrate. However, the memory transistor furtherincludes a memory or charge trapping layer between the control gate andthe channel and insulated from both by insulating or dielectric layers.A programming voltage applied to the control gate traps a charge on thecharge trapping layer, partially canceling or screening an electricfield from the control gate, thereby changing a threshold voltage(V_(T)) of the transistor and programming the memory cell. Duringread-out, this shift in V_(T) is sensed by the presence or absence ofcurrent flow through the channel with application of a predeterminedread-out voltage. To erase the memory transistor, an erase voltage isapplied to the control gate to restore, or reverse the shift in V_(T).

An important measure of merit for flash memories is data retention time,which is the time for which the memory transistor can hold charge orremain programmed without the application of power. The charge stored ortrapped in the charge trapping layer decreases over time due to leakagecurrent through the insulating layers, thereby reducing the differencebetween a programmed threshold voltage (VTP) and an erased thresholdvoltage (VTE) limiting data retention of the memory transistor.

One problem with conventional memory transistors and methods of formingthe same is that the charge trapping layer typically has poor ordecreasing data retention over time, limiting the useful transistorlifetime. Referring to FIG. 1A, if the charge trapping layer is silicon(Si) rich there is a large, initial window or difference between VTP,represented by graph or line 102, and the VTE, represented by line 104,but the window collapse very rapidly in retention mode to an end of life(EOL 106) of less than about 1.E+07 seconds.

Referring to FIG. 1B, if on the other hand the charge trapping layer isif a high quality nitride layer, that is one having a low stoichiometricconcentration of Si, the rate of collapse of the window or Vt slope inretention mode is reduced, but the initial program-erase window is alsoreduced. Moreover, the slope of Vt in retention mode is stillappreciably steep and the leakage path is not sufficiently minimized tosignificantly improve data retention, thus EOL 106 is only moderatelyimproved.

Another problem is that increasingly semiconductor memories combinelogic transistors, such as MOSFET's, with memory transistors inintegrated circuits (ICs) fabricated on a common substrate for embeddedmemory or System-On-Chip (SOC) applications. Many of the currentprocesses for forming performance of memory transistors are incompatiblewith those used for fabricating logic transistors.

Accordingly, there is a need for memory transistors and methods offorming the same that provides improved data retention and increasedtransistor lifetime. It is further desirable that the methods of formingthe memory device are compatible with those for forming logic elementsin the same IC formed on a common substrate.

SUMMARY OF THE INVENTION

The present invention provides a solution to these and other problems,and offers further advantages over conventional memory transistors ordevices and methods of forming the same.

In a first aspect, the present invention is directed to a non-volatilememory transistor including: (i) an oxide-nitride-oxide (ONO) dielectricstack on a surface of a semiconductor substrate; and (ii) high workfunction gate electrode formed over a surface of the ONO dielectricstack. Preferably, the high work function gate electrode comprises adoped polycrystalline silicon or polysilicon (poly) layer. Morepreferably, the doped polysilicon layer comprises a P+ dopant, such asboron or difluoroborane (BF₂), and the substrate comprises a siliconsurface on which the ONO dielectric stack is formed to form asilicon-oxide-nitride-oxide-silicon (SONOS) gate stack of a NMOS SONOSmemory transistor.

In certain embodiments, the ONO dielectric stack comprises a multi-layercharge storage layer including at least a substantially trap free bottomoxynitride layer and a charge trapping top oxynitride layer. In oneversion of these embodiments, for example, the top oxynitride layer isformed under conditions selected to form a silicon-rich, oxygen-leanoxynitride layer, and the bottom oxynitride layer is formed underconditions selected to form a silicon-rich, oxygen-rich oxynitridelayer.

In another aspect, the present invention is directed to a semiconductordevice including both a non-volatile memory transistor and a metal oxidesemiconductor (MOS) logic transistor and methods of forming the same.The memory transistor includes an ONO dielectric stack including amulti-layer charge storage layer formed on a surface of a semiconductorsubstrate, and a high work function gate electrode formed over a surfaceof the ONO dielectric stack. Preferably, the high work function gateelectrode of the memory transistor comprises a doped polysilicon layer.More preferably, the MOS logic transistor also includes a high workfunction gate electrode formed over a gate oxide on the surface of thesubstrate.

In one embodiment, the high work function gate electrodes of the memorytransistor and the MOS logic transistor comprise a P+ doped polysiliconlayer deposited over the ONO stack and gate oxide on a silicon substrateto form an NMOS SONOS memory transistor and a P-type (PMOS) logictransistor. The multi-layer charge storing layer can include, forexample, a substantially trap free bottom oxynitride layer and a chargetrapping top oxynitride layer.

In one embodiment, a method of forming such a semiconductor devicecomprises steps of: (i) forming an ONO dielectric stack on a surface ofa semiconductor substrate in at least a first region in which anon-volatile memory transistor is to be formed, the ONO dielectric stackincluding a multi-layer charge storage layer; (ii) forming an oxidelayer on the surface of the substrate in a second region in which a MOSlogic transistor is to be formed; and (iii) forming a high work functiongate electrode on a surface of the ONO dielectric stack. Preferably, thestep of forming a high work function gate electrode on a surface of theONO dielectric stack comprises the step of forming a doped polysiliconlayer on a surface of the ONO dielectric stack. More preferably, thestep of forming a doped polysilicon layer on a surface of the ONOdielectric stack further comprises the step of also forming the dopedpolysilicon layer on a surface of the oxide layer of the MOS logictransistor form a high work function gate electrode thereon.

In certain embodiments, the semiconductor substrate includes a siliconsurface over which the ONO dielectric stack is formed, and the step offorming a doped polysilicon layer comprises the step of forming a P+doped polysilicon layer to form an NMOS SONOS memory transistor and aPMOS logic transistor. Generally, the polysilicon layer can be doped byion implantation with boron or BF₂, before or after patterning thepolysilicon layer, the ONO dielectric stack and the oxide layer to formgate stacks of the memory transistor and the MOS logic transistor.

In other embodiments, the step of forming the ONO dielectric stackcomprises the step of forming a multi-layer charge storage layeroverlying a lower or tunnel oxide layer on the surface of the substrate,followed depositing or growing an upper or blocking oxide layer over themulti-layer charge storage layer. Preferably, the step of forming themulti-layer charge storage layer comprises the step of forming asubstantially trap free bottom oxynitride layer followed by forming acharge trapping top oxynitride layer overlying the trap free bottomoxynitride layer. More preferably, the bottom oxynitride layer is formedunder conditions selected to form a silicon-rich, oxygen-rich oxynitridelayer, and the top oxynitride layer is formed under conditions selectedto form a silicon-rich, oxygen-lean oxynitride layer. Optionally, thecharge trapping top oxynitride layer formed, for example, in a chemicalvapor deposition (CVD) process using a process gas comprisingBis-TertiaryButylAminoSilane (BTBAS) selected to increase aconcentration of carbon and thereby the number of traps therein.

BRIEF DESCRIPTION OF THE DRAWINGS

These and various other features and advantages of the present inventionwill be apparent upon reading of the following detailed description inconjunction with the accompanying drawings and the appended claimsprovided below, where:

FIG. 1A is a graph showing data retention for a memory transistor usinga charge storage layer formed according to a conventional method andhaving a large initial difference between programming and erase voltagesbut which loses charge quickly;

FIG. 1B is a graph showing data retention for a memory transistor usinga charge storage layer formed according to a conventional method andhaving a smaller initial difference between programming and erasevoltages;

FIGS. 2A through 2D are partial cross-sectional side views of asemiconductor device illustrating a process flow for forming asemiconductor device including a logic transistor and non-volatilememory transistor according to an embodiment of the present invention;and

FIG. 3 is a partial cross-sectional side view of a semiconductor deviceincluding a logic transistor and non-volatile memory transistorcomprising high work function gate electrodes according to an embodimentof the present invention.

DETAILED DESCRIPTION

The present invention is directed generally to non-volatile memorytransistor including a multi-layer charge storage layer and high workfunction gate electrode to increase data retention and/or to improveprogramming time and efficiency. The structure and method areparticularly useful for embedded memory or System-On-Chip (SOC)applications in which a semiconductor device includes both a logictransistor and non-volatile memory transistor comprising high workfunction gate electrodes formed on a common substrate.

In the following description, for purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present invention. It will be evident, however, toone skilled in the art that the present invention may be practicedwithout these specific details. In other instances, well-knownstructures, and techniques are not shown in detail or are shown in blockdiagram form in order to avoid unnecessarily obscuring an understandingof this description.

Reference in the description to “one embodiment” or “an embodiment”means that a particular feature, structure, or characteristic describedin connection with the embodiment is included in at least one embodimentof the invention. The appearances of the phrase “in one embodiment” invarious places in the specification do not necessarily all refer to thesame embodiment. The term “to couple” as used herein may include both todirectly connect and to indirectly connect through one or moreintervening components.

Briefly, a non-volatile memory transistor according to the presentinvention includes a high work function gate electrode formed over anoxide-nitride-oxide (ONO) dielectric stack. By high work function gateelectrode it is meant that the minimum energy needed to remove anelectron from the gate electrode is increased.

In certain preferred embodiments, the high work function gate electrodecomprises a doped polycrystalline silicon or polysilicon (poly) layer,the fabrication of which can be can be readily integrated into standardcomplementary metal-oxide-semiconductor (CMOS) process flows, such asthose used fabricate metal-oxide-semiconductor (MOS) logic transistors,to enable fabrication of semiconductor memories or devices includingboth memory and logic transistors. More preferably, the same dopedpolysilicon layer can also be patterned to form a high work functiongate electrode for the MOS logic transistor, thereby improving theperformance of the logic transistor and increasing the efficiency of thefabrication process. Optionally, the ONO dielectric stack includes amulti-layer charge storage or charge trapping layer to further improveperformance, and in particular data retention, of the memory transistor.

A semiconductor device including a non-volatile memory transistorcomprising a high work function gate electrode and methods of formingthe same will now be described in detail with reference to FIGS. 2Athrough 2D, which are partial cross-sectional side views of intermediatestructures illustrating a process flow for forming a semiconductordevice including both memory and logic transistors. For purposes ofclarity, many of the details of semiconductor fabrication that arewidely known and are not relevant to the present invention have beenomitted from the following description.

Referring to FIG. 2, fabrication of the semiconductor device begins withformation of an ONO dielectric stack 202 over a surface 204 of a waferor substrate 206. Generally, the ONO dielectric stack 202 includes athin, lower oxide layer or tunneling oxide layer 208 that separates orelectrically isolates a charge trapping or storage layer 210 from achannel region (not shown) of the memory transistor in the substrate206, and a top or blocking oxide layer 212. Preferably, as noted aboveand as shown in FIGS. 2A-2D, the charge storage layer 210 is amulti-layer charge storage layer including at least a top, chargetrapping oxynitride layer 210A and a lower, substantially trap freeoxynitride layer 210B.

Generally, the substrate 206 may include any known silicon-basedsemiconductor material including silicon, silicon-germanium,silicon-on-insulator, or silicon-on-sapphire substrate. Alternatively,the substrate 206 may include a silicon layer formed on anon-silicon-based semiconductor material, such as gallium-arsenide,germanium, gallium-nitride, or aluminum-phosphide. Preferably, thesubstrate 206 is a doped or undoped silicon substrate.

The lower oxide layer or tunneling oxide layer 208 of the ONO dielectricstack 202 generally includes a relatively thin layer of silicon dioxide(SiO₂) of from about 15 angstrom (Å) to about 22 Å, and more preferablyabout 18 Å. The tunneling oxide layer 208 can be formed or deposited byany suitable means including, for example, being thermally grown ordeposited using chemical vapor deposition (CVD). In a preferredembodiment, the tunnel oxide layer is formed or grown using a steamanneal. Generally, the process includes a wet-oxidizing method in whichthe substrate 206 is placed in a deposition or processing chamber,heated to a temperature from about 700° C. to about 850° C., and exposedto a wet vapor for a predetermined period of time selected based on adesired thickness of the finished tunneling oxide layer 208. Exemplaryprocess times are from about 5 to about 20 minutes. The oxidation can beperformed at atmospheric or at low pressure.

In a preferred embodiment, the oxynitride layers 210A, 210B, of themulti-layer charge storage layer 210 are formed or deposited in separatesteps utilizing different processes and process gases or sourcematerials, and have an overall or combined thickness of from about 70 Åto about 150 Å, and more preferably about 100 Å. The lower, trap freeoxynitride layer 210B can be formed or deposited by any suitable meansincluding, for example, deposition in a low pressure CVD process using aprocess gas including a silicon source, such as silane (SiH₄),chlorosilane (SiH₃Cl), dichlorosilane (SiH₂Cl₂), tetrachlorosilane(SiCl₄), a nitrogen source, such as nitrogen (N₂), ammonia (NH₃),nitrogen trioxide (NO₃) or nitrous oxide (N₂O), and an oxygen-containinggas, such as oxygen (O₂) or N₂O. In one embodiment the trap freeoxynitride layer 210B is deposited in a low pressure CVD process using aprocess gas including dichlorosilane, NH₃ and N₂O, while maintaining thechamber at a pressure of from about 5 millitorr (mT) to about 500 mT,and maintaining the substrate at a temperature of from about 700° C. toabout 850° C. and more preferably at least about 780° C., for a periodof from about 2.5 minutes to about 20 minutes. In particular, theprocess gas can include a first gas mixture of N₂O and NH₃ mixed in aratio of from about 8:1 to about 1:8 and a second gas mixture of DCS andNH₃ mixed in a ratio of from about 1:7 to about 7:1, and can beintroduced at a flow rate of from about 5 to about 200 standard cubiccentimeters per minute (sccm).

The top, charge trapping oxynitride layer 210A can be deposited over thebottom oxynitride layer 210B in a CVD process using a process gasincluding Bis-TertiaryButylAminoSilane (BTBAS). It has been found thatthe use of BTBAS increases the number of deep traps formed in theoxynitride by increasing the carbon level in the charge trappingoxynitride layer 210A. Moreover, these deep traps reduce charge lossesdue to thermal emission, thereby further improving data retention. Morepreferably, the process gas includes BTBAS and ammonia (NH₃) mixed at apredetermined ratio to provide a narrow band gap energy level in theoxynitride charge trapping layer. In particular, the process gas caninclude BTBAS and NH₃ mixed in a ratio of from about 7:1 to about 1:7.For example, in one embodiment the charge trapping oxynitride layer 210Ais deposited in a low pressure CVD process using BTBAS and ammonia NH₃at a chamber pressure of from about 5 mT to about 500 mT, and at asubstrate temperature of from about 700° C. to about 850° C. and morepreferably at least about 780° C., for a period of from about 2.5minutes to about 20 minutes.

It has been found that an oxynitride layer produced or deposited underthe above conditions yields a trap-rich oxynitride layer 210A, whichimproves the program and erase speed and increases of the initialdifference (window) between program and erase voltages withoutcompromising a charge loss rate of the memory transistor, therebyextending the operating life (EOL) of the device. Preferably, the chargetrapping oxynitride layer 210A has a charge trap density of at leastabout 1E10/cm², and more preferably from about 1E12/cm² to about1E14/cm².

Alternatively, the charge trapping oxynitride layer 210A can bedeposited over the bottom oxynitride layer 210B in a CVD process using aprocess gas including BTBAS and substantially not including ammonia(NH₃). In this alternative embodiment of the method, the step ofdepositing the top, charge trapping oxynitride layer 210A is followed bya thermal annealing step in a nitrogen atmosphere including nitrousoxide (N₂O), NH₃, and/or nitrogen oxide (NO).

Preferably, the top, charge trapping oxynitride layer 210A is depositedsequentially in the same CVD tool used to form the bottom, trap freeoxynitride layer 210B, substantially without breaking vacuum on thedeposition chamber. More preferably, the charge trapping oxynitridelayer 210A is deposited substantially without altering the temperatureto which the substrate 206 was heated during deposition of the trap freeoxynitride layer 210B.

A suitable thickness for the lower, trap free oxynitride layer 210B hasbeen found to be from about 10 Å to about 80 Å, and a ratio ofthicknesses between the bottom layer and the top, charge trappingoxynitride layer has been found to be from about 1:6 to about 6:1, andmore preferably at least about 1:4.

The top oxide layer 212 of the ONO dielectric stack 202 includes arelatively thick layer of SiO₂ of from about 20 Å to about 70 Å, andmore preferably about 45 Å. The top oxide layer 212 can be formed ordeposited by any suitable means including, for example, being thermallygrown or deposited using CVD. In a preferred embodiment, the top oxidelayer 212 is a high-temperature-oxide (HTO) deposited using CVD process.Generally, the deposition process includes exposing the substrate 308 toa silicon source, such as silane, chlorosilane, or dichlorosilane, andan oxygen-containing gas, such as O₂ or N₂O in a deposition chamber at apressure of from about 50 mT to about 1000 mT, for a period of fromabout 10 minutes to about 120 minutes while maintaining the substrate ata temperature of from about 650° C. to about 850° C. Preferably, the topoxide layer 212 is deposited sequentially in the same tool used to formthe oxynitride layers 210A, 210B. More preferably, the oxynitride layers210A, 210B, and the top oxide layer 212 are formed or deposited in thesame tool used to grow the tunneling oxide layer 208. Suitable toolsinclude, for example, an ONO AVP, commercially available from AVIZAtechnology of Scotts Valley, Calif. Referring to FIG. 2B, in thoseembodiments in which the semiconductor device is to further include alogic transistor, such as a MOS logic transistor, formed on the surfaceof the same substrate the ONO dielectric stack 202 is removed from aregion or area of the surface 204 in which the logic transistor is to beformed, and an oxide layer 214 the formed thereon.

Generally, the ONO dielectric stack 202 is removed from the desiredregion or area of the surface 204 using standard photolithographic andoxide etch techniques. For example, in one embodiment a patterned masklayer (not shown) is formed from a photo-resist deposited on the ONOdielectric stack 202, and the exposed region etched or removed using alow pressure radiofrequency (RF) coupled or generated plasma comprisingfluorinated hydrocarbon and/or fluorinated carbon compounds, such asC₂H₂F₄ commonly referred to as Freon®. Generally, the processing gasfurther includes argon (Ar) and nitrogen (N₂) at flow rates selected tomaintain a pressure in the etch chamber of from about 50 mT to about 250mT during processing.

The oxide layer 214 of the logic transistor can include a layer of SiO₂having a thickness of from about 30 to about 70 Å, and can be thermallygrown or deposited using CVD. In one embodiment, the oxide layer 214 isthermally grown using a steam oxidation process, for example, bymaintaining the substrate 206 in a steam atmosphere at a temperature offrom about 650° C. to about 850° C. for a period of from about 10minutes to about 120 minutes.

Next, a doped polysilicon layer is formed on a surface of the ONOdielectric stack 202 and, preferably, the oxide layer 214 of the logictransistor. More preferably, the substrate 206 is a silicon substrate orhas a silicon surface on which the ONO dielectric stack is formed toform a silicon-oxide-nitride-oxide-silicon (SONOS) gate stack of a SONOSmemory transistor.

Referring to FIG. 2C, forming of the doped polysilicon layer begins withthe deposition of a conformal polysilicon layer 216 having a thicknessof from about 200 Å to about 2000 Å over the ONO dielectric stack 202and the oxide layer 214. The polysilicon layer 216 can be formed ordeposited by any suitable means including, for example, deposition in alow pressure CVD process using a silicon source or precursor. In oneembodiment the polysilicon layer 216 is deposited in a low pressure CVDprocess using a silicon containing process gas, such as silane ordichlorosilane, and N₂, while maintaining the substrate 206 in a chamberat a pressure of from about 5 to 500 mT, and at a temperature of fromabout 600° C. to about 1000° C. for a period of from about 20 minutes toabout 100 minutes to a substantially undoped polysilicon layer. Thepolysilicon layer 216 can be formed or grown directly as a dopedpolysilicon layer through the addition of gases such as phosphine,arsine, diborane or difluoroborane (BF₂) to the CVD chamber during thelow pressure CVD process.

In one embodiment, the polysilicon layer 216 is doped following thegrowth or formation in the LPCVD process using ion implantation process.For example, the polysilicon layer 216 can be doped by implanting boron(B⁺) or BF₂ ions at an energy of from about 5 to about 100 kilo-electronvolts (keV), and a dose of from about 1e14 cm⁻² to about 1e16 cm⁻² toform an N-type (NMOS) SONOS memory transistor and, preferably, a P-type(PMOS) logic transistor having high work function gate electrodes. Morepreferably, the polysilicon layer 216 is doped to a concentration ordose selected so that the minimum energy needed to remove an electronfrom the gate electrode is from at least about 4.8 electron volts (eV)to about 5.3 eV.

Alternatively, the polysilicon layer 216 can be doped by ionimplantation after patterning or etching the polysilicon layer and theunderlying dielectric layers. It will be appreciated that thisembodiment includes additional masking steps to protect exposed areas ofthe substrate 206 surface 204 and/or the dielectric layers fromreceiving undesired doping. However, generally such a masking step isincluded in existing process flows regardless of whether theimplantation occurs before or after patterning.

Referring to FIG. 2D, the polysilicon layer 216 and the underlyingdielectric stack 202 and oxide layer 214 are patterned or etched to formhigh work function gate electrodes 218 of the memory transistor 220 andlogic transistor 222. In one embodiment polysilicon layer 216 can beetched or patterned using a plasma comprising hydrobromic acid (HBr),chlorine (CL₂) and/or oxygen (O₂) at a pressure of about 25 mTorr, and apower of about 450 W. The oxide layers 208, 212, 214, and oxynitridelayers 210A, 210B, can be etched using standard photolithographic andoxide etch techniques as described. For example, in one embodiment thepatterned polysilicon layer 216 is used as a mask, and the exposed oxidelayers 208, 212, 214, and oxynitride layers 210A, 210B, etched orremoved using low pressure RF plasma. Generally, the plasma is formedfrom a processing gas comprising a fluorinated hydrocarbon and/orfluorinated carbon compounds, and further including Ar and N₂ at flowrates selected to maintain a pressure in the etch chamber of from about50 mT to about 250 mT during processing.

Finally, the substrate is thermal annealed with a single or multipleannealing steps at a temperature of from about 800° C. to about 1050° C.for a time of from about 1 second to about 5 minutes to drive in ionsimplanted in the polysilicon layer 216, and to repair damage to thecrystal structure of the polysilicon layer caused by ion implantation.Alternatively, advanced annealing techniques, such as flash and laser,can be employed with temperatures as high as 1350° C. and anneal timesas low as 1 millisecond.

A partial cross-sectional side view of a semiconductor device 300including a logic transistor 302 and non-volatile memory transistor 304comprising high work function gate electrodes according to an embodimentof the present invention is shown in FIG. 3. Referring to FIG. 3, thememory transistor 304 is formed on a silicon substrate 306 and comprisesa high work function gate electrode 308 formed from a doped polysiliconlayer overlying a dielectric stack 310. The dielectric stack 310overlies and controls current through a channel region 312 separatingheavily doped source and drain (S/D) regions 314. Preferably, thedielectric stack 310 includes a tunnel oxide 316, a multi-layer chargestorage layer 318A, 318B, and a top or blocking oxide layer 320. Morepreferably, the multi-layer charge storage layer 318A, 318B, includes atleast a top, charge trapping oxynitride layer 318A and a lower,substantially trap free oxynitride layer 318B. Optionally, as shown inFIG. 3, the memory transistor 304 further includes one or more sidewallspacers 322 surrounding the gate stack to electrically insulate it fromcontacts (not shown) to the S/D regions 320 and from other transistorsin the semiconductor device formed on the substrate 306.

The logic transistor 302 comprises a gate electrode 324 overlying anoxide layer 326 formed over a channel region 328 separating heavilydoped source and drain regions 330, and, optionally, can include one ormore sidewall spacers 332 surrounding the gate electrically insulate itfrom contacts (not shown) to the S/D regions. Preferably, as shown inFIG. 3, the gate electrode 324 of the logic transistor 302 alsocomprises a high work function gate electrode formed from a dopedpolysilicon layer.

Generally, the semiconductor device 300 further includes a number ofisolation structures 334, such as a local oxidation of silicon (LOCOS)region or structure, a field oxidation region or structure (FOX), or ashallow trench isolation (STI) structure to electrically isolateindividual transistors formed on the substrate 306 from one another.

The foregoing description of specific embodiments and examples of theinvention have been presented for the purpose of illustration anddescription, and although the invention has been described andillustrated by certain of the preceding examples, it is not to beconstrued as being limited thereby. They are not intended to beexhaustive or to limit the invention to the precise forms disclosed, andmany modifications, improvements and variations within the scope of theinvention are possible in light of the above teaching. It is intendedthat the scope of the invention encompass the generic area as hereindisclosed, and by the claims appended hereto and their equivalents. Thescope of the present invention is defined by the claims, which includesknown equivalents and unforeseeable equivalents at the time of filing ofthis application.

What is claimed is:
 1. A semiconductor device comprising: a non-volatilememory transistor comprising: a charge trapping layer, a tunneldielectric disposed between the charge trapping layer and a substrate,and a blocking oxide disposed between the charge trapping layer and afirst gate electrode; a logic transistor comprising: a second gateelectrode, and an oxide disposed between the gate electrode and thesubstrate; and an isolation structure disposed between the non-volatilememory transistor and the logic transistor.
 2. The semiconductor deviceof claim 1, wherein the charge trapping layer comprises: acharge-trapping oxynitride layer; and a substantially trap-freeoxynitride layer disposed between the charge-trapping oxynitride layerand the tunnel dielectric.
 3. The semiconductor device of claim 2,wherein the charge-trapping oxynitride layer has a first thickness andthe substantially trap-free oxynitride layer has a second thickness, andwherein a ratio of the first thickness and the second thickness isapproximately 4:1.
 4. The semiconductor device of claim 1, wherein theblocking oxide is a high-temperature-oxide (HTO).
 5. The semiconductordevice of claim 1, further comprising: first sidewall spacers formedadjacent to the non-volatile memory transistor; and second sidewallspacers formed adjacent to the logic transistor.
 6. The semiconductordevice of claim 1, wherein the first gate electrode and the second gateelectrodes are high work function gate electrodes.
 7. The semiconductordevice of claim 1, wherein the non-volatile memory transistor is anN-type transistor and wherein the logic transistor is a P-typetransistor.
 8. The semiconductor device of claim 1, wherein the firstand second gate electrodes are formed from a doped polysilicon withdoped concentration such that the minimum energy to remove an electronfrom the first and second gate electrodes is from approximately 4.8-5.3electron volts (eV).
 9. The semiconductor device of claim 1, wherein theisolation structure is one of a local oxidation silicon (LOCOS) regionor structure, a field oxidation (FOX) region or structure, or a shallowtrench isolation (STI) structure.
 10. A memory transistor comprising: adielectric stack comprising, a first oxide layer formed on a substrate,a first nitride layer formed on the first oxide layer, a second nitridelayer formed on the first nitride layer, and a second oxide nitridelayer formed the second nitride layer; and a gate electrode formed onthe second oxide layer of the dielectric stack.
 11. The memorytransistor of claim 10, wherein the first oxide layer is a tunnelingoxide.
 12. The memory transistor of claim 10, wherein the first nitridelayer comprises a substantially trap-free oxynitride.
 13. The memorytransistor of claim 10, wherein the second nitride layer comprises acharge-trapping oxynitride.
 14. The memory transistor of claim 10,wherein the second oxide layer is a high-temperature-oxide (HTO)blocking oxide.
 15. The memory transistor of claim 10, wherein the gateelectrode is high work function gate electrode.
 16. The memorytransistor of claim 10, wherein the first gate electrode is formed froma doped polysilicon with doped concentration such that the minimumenergy to remove an electron from the gate electrode is fromapproximately 4.8-5.3 electron volts (eV).
 17. The memory transistor ofclaim 10, wherein the first nitride layer has a first thickness and thesecond nitride layer as a second thickness, and wherein a ratio of thefirst thickness and the second thickness is approximately 4:1.
 18. Thememory transistor of claim 10 further comprising sidewall spacers formedadjacent to the dielectric stack and the gate electrode.
 19. A memorydevice comprising: a non-volatile memory transistor comprising: a chargetrapping layer, a tunnel dielectric disposed between the charge trappinglayer and a substrate, and a blocking oxide disposed between the chargetrapping layer and a first gate electrode; a logic transistorcomprising: a second gate electrode, and an oxide disposed between thegate electrode and the substrate; and an isolation structure disposedbetween the non-volatile memory transistor and the logic transistor. 20.The memory device of claim 19, wherein the charge trapping layercomprises: a charge-trapping oxynitride layer; and a substantiallytrap-free oxynitride layer disposed between the charge-trappingoxynitride layer and the tunnel dielectric.